2SK2933-E
Renesas
Renesas
2SK2933 - N-CHANNEL POWER MOSFET
$1.51
Available to order
Reference Price (USD)
1+
$1.50798
500+
$1.4929002
1000+
$1.4778204
1500+
$1.4627406
2000+
$1.4476608
2500+
$1.432581
Exquisite packaging
Discount
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Enhance your electronic projects with the 2SK2933-E single MOSFET from Renesas. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Renesas's 2SK2933-E for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 25W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220CFM
- Package / Case: TO-220-3 Full Pack
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