50MT060ULS
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 100A 445W 10MTP
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The 50MT060ULS by Vishay General Semiconductor - Diodes Division redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the 50MT060ULS in high-efficiency servo controllers for manufacturing automation. Vishay General Semiconductor - Diodes Division combines innovation with quality in every 50MT060ULS module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 445 W
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 100A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 14.7 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 10-MTP
- Supplier Device Package: 10-MTP
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