MKI75-06A7
IXYS
IXYS
IGBT MODULE 600V 90A 280W E2
$0.00
Available to order
Reference Price (USD)
6+
$54.41667
Exquisite packaging
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Experience next-generation power control with IXYS's MKI75-06A7 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MKI75-06A7 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MKI75-06A7 in your next-generation HVDC systems or particle accelerator power supplies. IXYS delivers reliability where it matters most with the MKI75-06A7 IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Power - Max: 280 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
- Current - Collector Cutoff (Max): 1.3 mA
- Input Capacitance (Cies) @ Vce: 3.2 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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