MIXA10WB1200TML
IXYS
IXYS
IGBT MODULE 1200V 17A 63W E1
$0.00
Available to order
Reference Price (USD)
10+
$33.81800
Exquisite packaging
Discount
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IXYS's MIXA10WB1200TML stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the MIXA10WB1200TML enables higher power density in MRI gradient amplifiers. Choose IXYS for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: PT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 17 A
- Power - Max: 63 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 9A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E1
- Supplier Device Package: E1
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