VS-40MT120UHTAPBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 1200V 80A 463W MTP
$0.00
Available to order
Reference Price (USD)
105+
$89.02876
Exquisite packaging
Discount
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Engineered for excellence, the VS-40MT120UHTAPBF IGBT module by Vishay General Semiconductor - Diodes Division sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The VS-40MT120UHTAPBF finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Vishay General Semiconductor - Diodes Division continues to lead the IGBT module revolution with innovations like the VS-40MT120UHTAPBF.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Power - Max: 463 W
- Vce(on) (Max) @ Vge, Ic: 4.91V @ 15V, 80A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 8.28 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 12-MTP Module
- Supplier Device Package: MTP
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