STGB20H65FB2
STMicroelectronics
STMicroelectronics
IGBT 600V 40A 167W D2PAK
$0.92
Available to order
Reference Price (USD)
1+
$0.92400
500+
$0.91476
1000+
$0.90552
1500+
$0.89628
2000+
$0.88704
2500+
$0.8778
Exquisite packaging
Discount
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Enhance your electronic projects with the STGB20H65FB2 Single IGBT transistor from STMicroelectronics. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the STGB20H65FB2 ensures precision and reliability. STMicroelectronics's cutting-edge technology guarantees a component that meets the highest industry standards. Choose STGB20H65FB2 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
- Power - Max: 147 W
- Switching Energy: 265µJ (on), 214µJ (off)
- Input Type: Standard
- Gate Charge: 56 nC
- Td (on/off) @ 25°C: 16ns/78.8ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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