APT11GF120KRG
Microsemi Corporation
Microsemi Corporation
IGBT 1200V 25A 156W TO220
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Upgrade your power management systems with the APT11GF120KRG Single IGBT transistor from Microsemi Corporation. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the APT11GF120KRG provides reliable and efficient operation. Microsemi Corporation's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose APT11GF120KRG for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 25 A
- Current - Collector Pulsed (Icm): 44 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 8A
- Power - Max: 156 W
- Switching Energy: 300µJ (on), 285µJ (off)
- Input Type: Standard
- Gate Charge: 65 nC
- Td (on/off) @ 25°C: 7ns/100ns
- Test Condition: 800V, 8A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220 [K]
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