NGTB50N60L2WG
onsemi
onsemi
IGBT 600V 50A TO247
$0.00
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Reference Price (USD)
60+
$7.42617
Exquisite packaging
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The NGTB50N60L2WG Single IGBT transistor by onsemi is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the NGTB50N60L2WG provides consistent performance in varied conditions. Rely on onsemi's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
- Power - Max: 500 W
- Switching Energy: 800µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 310 nC
- Td (on/off) @ 25°C: 110ns/270ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 67 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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