APT33GF120B2RDQ2G
Microchip Technology
Microchip Technology
IGBT 1200V 64A 357W TMAX
$18.19
Available to order
Reference Price (USD)
1+
$19.30000
10+
$17.54300
25+
$16.22720
100+
$14.91150
250+
$13.59580
500+
$12.71866
Exquisite packaging
Discount
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The APT33GF120B2RDQ2G Single IGBT transistor by Microchip Technology is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the APT33GF120B2RDQ2G provides consistent performance in varied conditions. Rely on Microchip Technology's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 64 A
- Current - Collector Pulsed (Icm): 75 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
- Power - Max: 357 W
- Switching Energy: 1.315mJ (on), 1.515mJ (off)
- Input Type: Standard
- Gate Charge: 170 nC
- Td (on/off) @ 25°C: 14ns/185ns
- Test Condition: 800V, 25A, 4.3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: -
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