STGWT28IH125DF
STMicroelectronics
STMicroelectronics
IGBT 1250V 60A 375W TO-3P
$2.89
Available to order
Reference Price (USD)
300+
$3.69077
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the STGWT28IH125DF Single IGBT transistor by STMicroelectronics, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the STGWT28IH125DF ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the STGWT28IH125DF for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1250 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 25A
- Power - Max: 375 W
- Switching Energy: 720µJ (off)
- Input Type: Standard
- Gate Charge: 114 nC
- Td (on/off) @ 25°C: -/128ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
Related Products
STMicroelectronics
STGW80H65FB
STMicroelectronics
STGWA20HP65FB2
Rohm Semiconductor
RGT16NS65DGTL
onsemi
NGTB25N120FL3WG
STMicroelectronics
STGF4M65DF2
Microchip Technology
APT50GN120L2DQ2G
onsemi
FGH60T65SQD-F155
Renesas Electronics America Inc
RJP6085DPN-00#T2
Infineon Technologies
IGB03N120H2ATMA1
Infineon Technologies