IKD10N60RFATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 20A 150W PG-TO252-3
$1.78
Available to order
Reference Price (USD)
2,500+
$0.82824
5,000+
$0.81802
Exquisite packaging
Discount
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Upgrade your power management systems with the IKD10N60RFATMA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the IKD10N60RFATMA1 provides reliable and efficient operation. Infineon Technologies's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose IKD10N60RFATMA1 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: 150 W
- Switching Energy: 190µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 64 nC
- Td (on/off) @ 25°C: 12ns/168ns
- Test Condition: 400V, 10A, 26Ohm, 15V
- Reverse Recovery Time (trr): 72 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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