NGTB25N120FL3WG
onsemi
onsemi
IGBT 1200V 100A TO247
$6.63
Available to order
Reference Price (USD)
1+
$6.12000
30+
$5.22533
120+
$4.55433
510+
$3.90557
1,020+
$3.32389
Exquisite packaging
Discount
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The NGTB25N120FL3WG Single IGBT transistor by onsemi is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the NGTB25N120FL3WG provides consistent performance in varied conditions. Rely on onsemi's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
- Power - Max: 349 W
- Switching Energy: 1mJ (on), 700µJ (off)
- Input Type: Standard
- Gate Charge: 136 nC
- Td (on/off) @ 25°C: 15ns/109ns
- Test Condition: 600V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 114 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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