APT75GN120JDQ3G
Microsemi Corporation
Microsemi Corporation
IGBT MOD 1200V 124A 379W ISOTOP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the APT75GN120JDQ3G IGBT module by Microsemi Corporation sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The APT75GN120JDQ3G finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Microsemi Corporation continues to lead the IGBT module revolution with innovations like the APT75GN120JDQ3G.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 124 A
- Power - Max: 379 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Current - Collector Cutoff (Max): 200 µA
- Input Capacitance (Cies) @ Vce: 4.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: ISOTOP
- Supplier Device Package: ISOTOP®
Related Products
Powerex Inc.
CM400DY-24A
Infineon Technologies
6MS24017P43W39872NOSA1
Infineon Technologies
FS200R07A1E3BOSA1
Littelfuse Inc.
MG06300D-BN4MM
IXYS
IXGN200N60B
Powerex Inc.
CM450DY-24S
Infineon Technologies
2PS18012E44G40113NOSA1
Infineon Technologies
2LS20017E42W36702NOSA1
Infineon Technologies
FS75R07N2E4B11BOSA1
Infineon Technologies