MG06300D-BN4MM
Littelfuse Inc.
Littelfuse Inc.
IGBT MODULE 600V 300A 940W D3
$0.00
Available to order
Reference Price (USD)
1+
$122.16000
10+
$114.17100
25+
$110.17920
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Littelfuse Inc.'s MG06300D-BN4MM IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The MG06300D-BN4MM offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the MG06300D-BN4MM in your next-generation HVDC systems or particle accelerator power supplies. Littelfuse Inc. delivers reliability where it matters most with the MG06300D-BN4MM IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 400 A
- Power - Max: 940 W
- Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 300A (Typ)
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: D3
Related Products
IXYS
IXGN200N60B
Powerex Inc.
CM450DY-24S
Infineon Technologies
2PS18012E44G40113NOSA1
Infineon Technologies
2LS20017E42W36702NOSA1
Infineon Technologies
FS75R07N2E4B11BOSA1
Infineon Technologies
BSM200GB60DLCHOSA1
Powerex Inc.
CM200DY-12NF
Infineon Technologies
FS200R07A1E3BOMA1
Vishay General Semiconductor - Diodes Division
VS-ETF150Y65U
onsemi