APTGF25H120T2G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 40A 208W SP2
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Discover the power of Microsemi Corporation's APTGF25H120T2G, a premium IGBT module in the Transistors - IGBTs - Modules classification. This discrete semiconductor solution offers ultra-low conduction losses and avalanche ruggedness for harsh environments. The module's unique selling points include: VCE(sat) negative temperature coefficient, aluminum nitride substrate, and press-pack technology. Major application sectors include rail transportation, marine propulsion, and aerospace power systems. The APTGF25H120T2G performs exceptionally well in high-voltage DC transmission and pulsed power applications. With Microsemi Corporation's APTGF25H120T2G, you get unmatched reliability in power electronics designs.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Power - Max: 208 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 25A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SP2
- Supplier Device Package: SP2
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