APTGT100A120D1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1200V 150A 520W D1
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Engineered for excellence, the APTGT100A120D1G IGBT module by Microsemi Corporation sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The APTGT100A120D1G finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Microsemi Corporation continues to lead the IGBT module revolution with innovations like the APTGT100A120D1G.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 520 W
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: D1
- Supplier Device Package: D1
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