APTGT75DA170D1G
Microsemi Corporation
Microsemi Corporation
IGBT MODULE 1700V 120A 520W D1
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Experience next-generation power control with Microsemi Corporation's APTGT75DA170D1G IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The APTGT75DA170D1G offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the APTGT75DA170D1G in your next-generation HVDC systems or particle accelerator power supplies. Microsemi Corporation delivers reliability where it matters most with the APTGT75DA170D1G IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 120 A
- Power - Max: 520 W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: D1
- Supplier Device Package: D1
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