BFR181E6327HTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 8GHZ SOT23-3
$0.54
Available to order
Reference Price (USD)
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$0.5346
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$0.5292
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$0.5238
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$0.5184
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$0.513
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Discover the BFR181E6327HTSA1, a premium RF Bipolar Junction Transistor (BJT) by Infineon Technologies, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The BFR181E6327HTSA1 boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose Infineon Technologies for cutting-edge RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
- Gain: 18.5dB
- Power - Max: 175mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
- Current - Collector (Ic) (Max): 20mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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