BFR360L3E6765XTMA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 9V 14GHZ TSLP-3-1
$0.45
Available to order
Reference Price (USD)
15,000+
$0.08758
30,000+
$0.08033
75,000+
$0.07731
105,000+
$0.07429
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your RF designs with the BFR360L3E6765XTMA1, a high-efficiency Bipolar Junction Transistor (BJT) from Infineon Technologies. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The BFR360L3E6765XTMA1 features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust Infineon Technologies for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 9V
- Frequency - Transition: 14GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
- Gain: 11.5dB ~ 16dB
- Power - Max: 210mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
- Current - Collector (Ic) (Max): 35mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: PG-TSLP-3-1
Related Products
Rohm Semiconductor
2SC4713KT146S
Infineon Technologies
BFR181E6327
Infineon Technologies
BFS483H6327XTSA1
NXP USA Inc.
BFU530WX
Renesas
NE85633-T1B-A
Solid State Inc.
2N3501
NXP USA Inc.
BFU580QX
onsemi
15GN01CA-TB-E
Infineon Technologies
BFP420H6740
Infineon Technologies