BLF6G22LS-180RN112
NXP USA Inc.
NXP USA Inc.
RF POWER TRANSISTORS
$72.38
Available to order
Reference Price (USD)
1+
$72.38000
500+
$71.6562
1000+
$70.9324
1500+
$70.2086
2000+
$69.4848
2500+
$68.761
Exquisite packaging
Discount
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The BLF6G22LS-180RN112 by NXP USA Inc. is a state-of-the-art RF Bipolar Junction Transistor (BJT) that stands out in the Discrete Semiconductor Products category. Designed for high-frequency applications, this transistor offers exceptional linearity and low noise, making it ideal for RF amplification. Its compact design and high power handling capability ensure reliable performance in critical applications such as base stations, military communication, and medical devices. Key attributes include high gain bandwidth, excellent thermal resistance, and stable operation under varying conditions. Upgrade your RF circuits with the BLF6G22LS-180RN112 from NXP USA Inc., a leader in semiconductor innovation.
Specifications
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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