BSC084P03NS3EGATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 30V 14.9A 8TDSON
$0.78
Available to order
Reference Price (USD)
5,000+
$0.48191
Exquisite packaging
Discount
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The BSC084P03NS3EGATMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Not For New Designs
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs: 57.7 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-5
- Package / Case: 8-PowerTDFN
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