BSM75GB170DN2HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 110A 625W
$93.33
Available to order
Reference Price (USD)
1+
$93.33000
500+
$92.3967
1000+
$91.4634
1500+
$90.5301
2000+
$89.5968
2500+
$88.6635
Exquisite packaging
Discount
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Infineon Technologies's BSM75GB170DN2HOSA1 represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the BSM75GB170DN2HOSA1 in industrial servo drives or medium-voltage frequency converters. Trust Infineon Technologies's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 110 A
- Power - Max: 625 W
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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