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C3M0120065D

Wolfspeed, Inc.
C3M0120065D Preview
Wolfspeed, Inc.
650V 120M SIC MOSFET
$8.47
Available to order
Reference Price (USD)
1+
$8.47000
500+
$8.3853
1000+
$8.3006
1500+
$8.2159
2000+
$8.1312
2500+
$8.0465
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
  • Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
  • Vgs (Max): +19V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 98W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3

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