C3M0120065D
Wolfspeed, Inc.

Wolfspeed, Inc.
650V 120M SIC MOSFET
$8.47
Available to order
Reference Price (USD)
1+
$8.47000
500+
$8.3853
1000+
$8.3006
1500+
$8.2159
2000+
$8.1312
2500+
$8.0465
Exquisite packaging
Discount
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Enhance your electronic projects with the C3M0120065D single MOSFET from Wolfspeed, Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Wolfspeed, Inc.'s C3M0120065D for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 157mOhm @ 6.76A, 15V
- Vgs(th) (Max) @ Id: 3.6V @ 1.86mA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 15 V
- Vgs (Max): +19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 98W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3