CPV363M4K
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 11A 36W IMS-2
$0.00
Available to order
Reference Price (USD)
160+
$41.09300
Exquisite packaging
Discount
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Engineered for excellence, the CPV363M4K IGBT module by Vishay General Semiconductor - Diodes Division sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The CPV363M4K finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Vishay General Semiconductor - Diodes Division continues to lead the IGBT module revolution with innovations like the CPV363M4K.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 11 A
- Power - Max: 36 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 11A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 740 pF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 19-SIP (13 Leads), IMS-2
- Supplier Device Package: IMS-2
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Vishay General Semiconductor - Diodes Division