FMG2G50US120
onsemi
onsemi
IGBT MODULE 1200V 50A 320W 7PMGA
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The FMG2G50US120 by onsemi redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the FMG2G50US120 in high-efficiency servo controllers for manufacturing automation. onsemi combines innovation with quality in every FMG2G50US120 module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 320 W
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 50A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 7PM-GA
- Supplier Device Package: 7PM-GA
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