DGTD65T15H2TF
Diodes Incorporated
Diodes Incorporated
IGBT600V-XITO-220AB
$2.02
Available to order
Reference Price (USD)
1+
$2.36000
10+
$2.13800
100+
$1.74750
500+
$1.46250
1,000+
$1.23750
Exquisite packaging
Discount
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Upgrade your power management systems with the DGTD65T15H2TF Single IGBT transistor from Diodes Incorporated. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the DGTD65T15H2TF provides reliable and efficient operation. Diodes Incorporated's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose DGTD65T15H2TF for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
- Power - Max: 48 W
- Switching Energy: 270µJ (on), 86µJ (off)
- Input Type: Standard
- Gate Charge: 61 nC
- Td (on/off) @ 25°C: 19ns/128ns
- Test Condition: 400V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): 150 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Supplier Device Package: ITO-220AB
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