IXYH40N120A4
IXYS
IXYS
IGBT 1200V 40A GENX4 XPT TO-247
$8.73
Available to order
Reference Price (USD)
1+
$8.72547
500+
$8.6382153
1000+
$8.5509606
1500+
$8.4637059
2000+
$8.3764512
2500+
$8.2891965
Exquisite packaging
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Optimize your power systems with the IXYH40N120A4 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXYH40N120A4 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 140 A
- Current - Collector Pulsed (Icm): 275 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 32A
- Power - Max: 600 W
- Switching Energy: 2.3mJ (on), 3.75mJ (off)
- Input Type: Standard
- Gate Charge: 90 nC
- Td (on/off) @ 25°C: 22ns/204ns
- Test Condition: 600V, 32A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXYH)
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