DMN6013LFGQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 10.3A PWRDI3333
$0.97
Available to order
Reference Price (USD)
2,000+
$0.40388
6,000+
$0.37913
10,000+
$0.36675
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN6013LFGQ-7 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMN6013LFGQ-7 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2577 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
Related Products
Infineon Technologies
IPB80P03P405ATMA2
Rohm Semiconductor
SCT2450KEHRC11
onsemi
NTH4L060N065SC1
Infineon Technologies
IPW65R125CFD7XKSA1
Vishay Siliconix
SIHB17N80E-T1-GE3
STMicroelectronics
SCTL90N65G2V
Infineon Technologies
IPZ40N04S53R9ATMA1
Goford Semiconductor
G29
Renesas Electronics America Inc
UPA2210T1M-T2-AT
Diodes Incorporated