DMN6069SFVW-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI333
$0.21
Available to order
Reference Price (USD)
1+
$0.20733
500+
$0.2052567
1000+
$0.2031834
1500+
$0.2011101
2000+
$0.1990368
2500+
$0.1969635
Exquisite packaging
Discount
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Optimize your power electronics with the DMN6069SFVW-7 single MOSFET from Diodes Incorporated. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the DMN6069SFVW-7 combines cutting-edge technology with Diodes Incorporated's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 69mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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