DMP2100U-7
Diodes Incorporated
Diodes Incorporated
MOSFET P CH 20V 4.3A SOT23
$0.46
Available to order
Reference Price (USD)
3,000+
$0.08952
6,000+
$0.08131
15,000+
$0.07311
30,000+
$0.06901
75,000+
$0.06203
150,000+
$0.05998
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the DMP2100U-7 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMP2100U-7 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
- Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 216 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Vishay Siliconix
SUM85N15-19-E3
Infineon Technologies
IPB240N03S4LR9ATMA1
Panjit International Inc.
PJQ4404P-AU_R2_000A1
Panjit International Inc.
PJD35P03_L2_00001
Vishay Siliconix
SIHP28N65E-GE3
Texas Instruments
CSD22205L
IXYS
IXTK120N25P
Torex Semiconductor Ltd
XP232N0301TR-G
Nexperia USA Inc.
PSMN1R5-30BLEJ
Texas Instruments