DMP4013LFGQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 40V 10.3A PWRDI3333
$1.00
Available to order
Reference Price (USD)
1+
$1.00000
500+
$0.99
1000+
$0.98
1500+
$0.97
2000+
$0.96
2500+
$0.95
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMP4013LFGQ-7 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 68.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3426 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
Related Products
STMicroelectronics
SCT1000N170
Diodes Incorporated
DMTH10H4M5LPS-13
Diodes Incorporated
DMT61M5SPSW-13
Diodes Incorporated
DMT69M5LFVW-13
Diodes Incorporated
DMN31D6UT-7
Microchip Technology
MSC400SMA330B4
Fairchild Semiconductor
SI4463DY
Rohm Semiconductor
R6024KNXC7G
Harris Corporation
RF1S45N06SM
Infineon Technologies