DMT3009UFVW-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 10.6A/30A PWRDI
$0.19
Available to order
Reference Price (USD)
1+
$0.18908
500+
$0.1871892
1000+
$0.1852984
1500+
$0.1834076
2000+
$0.1815168
2500+
$0.179626
Exquisite packaging
Discount
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The DMT3009UFVW-13 by Diodes Incorporated is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the DMT3009UFVW-13 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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