DMTH10H2M5STLW-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI10
$2.43
Available to order
Reference Price (USD)
1+
$2.42550
500+
$2.401245
1000+
$2.37699
1500+
$2.352735
2000+
$2.32848
2500+
$2.304225
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the DMTH10H2M5STLW-13 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMTH10H2M5STLW-13 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 215A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 124.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8450 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 5.8W (Ta), 230.8W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI1012-8
- Package / Case: 8-PowerSFN
Related Products
Nexperia USA Inc.
NX2301PVL
Panjit International Inc.
PJF60R540E_T0_00001
Infineon Technologies
IRFP4768PBF
Panjit International Inc.
PJP13NA50_T0_00001
Nexperia USA Inc.
BUK9M6R7-40HX
Infineon Technologies
IRFB3256PBF
Diodes Incorporated
DMT10H010LK3-13
STMicroelectronics
STH2N120K5-2AG
onsemi
NTHL020N090SC1
Microchip Technology