EMB61T2R
Rohm Semiconductor
Rohm Semiconductor
TRANS 2PNP PREBIAS 0.15W EMT6
$0.08
Available to order
Reference Price (USD)
8,000+
$0.06408
16,000+
$0.05696
24,000+
$0.05340
56,000+
$0.04984
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the EMB61T2R by Rohm Semiconductor, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the EMB61T2R excels in automotive systems, power management modules, and communication devices. Rohm Semiconductor's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose EMB61T2R for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: EMT6
Related Products
onsemi
NSM11156DW6T1G
Diodes Incorporated
DCX124EUQ-13-F
Nexperia USA Inc.
NHUMB13X
onsemi
NSVMUN5333DW1T3G
Nexperia USA Inc.
PEMD12,115
Infineon Technologies
BCR08PNH6327XTSA1
Nexperia USA Inc.
PUMD15,115
Panasonic Electronic Components
XP0621100L
Toshiba Semiconductor and Storage
RN1906,LF(CT
onsemi