F4250R17MP4B11BPSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1700V 370A
$181.62
Available to order
Reference Price (USD)
6+
$209.04667
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's F4250R17MP4B11BPSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the F4250R17MP4B11BPSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 370 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 250A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FZ1200R17HE4HOSA2
STMicroelectronics
A2C50S65M2
Microchip Technology
APTGT200DA60T3AG
STMicroelectronics
A2P75S12M3-F
Infineon Technologies
FP25R12W2T4BOMA1
Infineon Technologies
FZ1800R17HP4B29BOSA2
Infineon Technologies
DF900R12IP4DVBOSA1
Infineon Technologies
FS75R12W2T4B11BOMA1
Infineon Technologies
FP10R12W1T4PBPSA1
Microchip Technology