FZ1200R17HE4HOSA2
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 1200A 7800W
$983.70
Available to order
Reference Price (USD)
2+
$622.90500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's FZ1200R17HE4HOSA2 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FZ1200R17HE4HOSA2 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FZ1200R17HE4HOSA2 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FZ1200R17HE4HOSA2 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 1200 A
- Power - Max: 7800 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 97 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
STMicroelectronics
A2C50S65M2
Microchip Technology
APTGT200DA60T3AG
STMicroelectronics
A2P75S12M3-F
Infineon Technologies
FP25R12W2T4BOMA1
Infineon Technologies
FZ1800R17HP4B29BOSA2
Infineon Technologies
DF900R12IP4DVBOSA1
Infineon Technologies
FS75R12W2T4B11BOMA1
Infineon Technologies
FP10R12W1T4PBPSA1
Microchip Technology
APT75GP120JDQ3
Infineon Technologies