FCX555TA
Diodes Incorporated
Diodes Incorporated
TRANS PNP 180V 0.7A SOT89-3
$0.57
Available to order
Reference Price (USD)
1,000+
$0.24416
2,000+
$0.22479
5,000+
$0.21187
10,000+
$0.19895
25,000+
$0.19680
Exquisite packaging
Discount
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Enhance your circuit designs with the FCX555TA Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The FCX555TA is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Diodes Incorporated to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 700 mA
- Voltage - Collector Emitter Breakdown (Max): 180 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 25mA, 250mA
- Current - Collector Cutoff (Max): 20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
- Power - Max: 2.1 W
- Frequency - Transition: 100MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-243AA
- Supplier Device Package: SOT-89-3
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