FF11MR12W1M1B70BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY1B-2
$260.68
Available to order
Reference Price (USD)
1+
$260.68000
500+
$258.0732
1000+
$255.4664
1500+
$252.8596
2000+
$250.2528
2500+
$247.646
Exquisite packaging
Discount
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The FF11MR12W1M1B70BPSA1 by Infineon Technologies is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the FF11MR12W1M1B70BPSA1 ensures consistent and dependable performance. Infineon Technologies's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 7.36nF @ 800V
- Power - Max: 20mW (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B