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FF11MR12W1M1B70BPSA1

Infineon Technologies
FF11MR12W1M1B70BPSA1 Preview
Infineon Technologies
LOW POWER EASY AG-EASY1B-2
$260.68
Available to order
Reference Price (USD)
1+
$260.68000
500+
$258.0732
1000+
$255.4664
1500+
$252.8596
2000+
$250.2528
2500+
$247.646
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Last Time Buy
  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 7.36nF @ 800V
  • Power - Max: 20mW (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B

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