SP8M6HZGTB
Rohm Semiconductor
Rohm Semiconductor
30V NCH+PCH POWER MOSFET. SP8M6H
$1.52
Available to order
Reference Price (USD)
1+
$1.52000
500+
$1.5048
1000+
$1.4896
1500+
$1.4744
2000+
$1.4592
2500+
$1.444
Exquisite packaging
Discount
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Choose the SP8M6HZGTB from Rohm Semiconductor for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the SP8M6HZGTB stands out for its reliability and efficiency. Rohm Semiconductor's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 3.5A (Ta)
- Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 90mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 5.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 490pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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