SQJB60EP-T2_GE3
Vishay Siliconix
Vishay Siliconix
DUAL N-CHANNEL 60-V (D-S) 175C M
$0.57
Available to order
Reference Price (USD)
1+
$0.56628
500+
$0.5606172
1000+
$0.5549544
1500+
$0.5492916
2000+
$0.5436288
2500+
$0.537966
Exquisite packaging
Discount
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Discover the high-performance SQJB60EP-T2_GE3 from Vishay Siliconix, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the SQJB60EP-T2_GE3 delivers unmatched performance. Trust Vishay Siliconix's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Power - Max: 48W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
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