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MSCSM120DDUM16CTBL3NG

Microchip Technology
MSCSM120DDUM16CTBL3NG Preview
Microchip Technology
PM-MOSFET-SIC-SBD-BL3
$648.09
Available to order
Reference Price (USD)
1+
$648.09000
500+
$641.6091
1000+
$635.1282
1500+
$628.6473
2000+
$622.1664
2500+
$615.6855
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 4 N-Channel, Common Source
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
  • Power - Max: 560W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -

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