FGA30N65SMD
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.96
Available to order
Reference Price (USD)
450+
$2.83533
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the FGA30N65SMD Single IGBT transistor by Fairchild Semiconductor, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the FGA30N65SMD ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the FGA30N65SMD for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
- Power - Max: 300 W
- Switching Energy: 716µJ (on), 208µJ (off)
- Input Type: Standard
- Gate Charge: 87 nC
- Td (on/off) @ 25°C: 14ns/102ns
- Test Condition: 400V, 30A, 6Ohm, 15V
- Reverse Recovery Time (trr): 35 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
Related Products
onsemi
NGTD23T120F2WP
Littelfuse Inc.
IXYF40N450
Infineon Technologies
IKN01N60RC2ATMA1
Infineon Technologies
SIGC109T120R3
IXYS
IXYH20N65B3
Infineon Technologies
F4-50R12MS4
Harris Corporation
HGTD3N60B3
Harris Corporation
HGTG12N60DID
Renesas Electronics America Inc
RJH30E2DPP-00#T2
IXYS