SIGC109T120R3
Infineon Technologies
Infineon Technologies
INSULATED GATE BIPOLAR TRANSISTO
$10.06
Available to order
Reference Price (USD)
1+
$10.06000
500+
$9.9594
1000+
$9.8588
1500+
$9.7582
2000+
$9.6576
2500+
$9.557
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIGC109T120R3 Single IGBT transistor by Infineon Technologies is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the SIGC109T120R3 provides consistent performance in varied conditions. Rely on Infineon Technologies's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
Related Products
IXYS
IXYH20N65B3
Infineon Technologies
F4-50R12MS4
Harris Corporation
HGTD3N60B3
Harris Corporation
HGTG12N60DID
Renesas Electronics America Inc
RJH30E2DPP-00#T2
IXYS
IXYP30N120C4
Micro Commercial Co
MIW50N65F-BP
Renesas Electronics America Inc
RJP30E4DPE-00#J3
STMicroelectronics
STGP30H65DFB2
Harris Corporation