IKN01N60RC2ATMA1
Infineon Technologies
Infineon Technologies
HOME APPLIANCES 14 PG-SOT223-3
$0.76
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Reference Price (USD)
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$0.76000
500+
$0.7524
1000+
$0.7448
1500+
$0.7372
2000+
$0.7296
2500+
$0.722
Exquisite packaging
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Enhance your electronic projects with the IKN01N60RC2ATMA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKN01N60RC2ATMA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKN01N60RC2ATMA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 2.2 A
- Current - Collector Pulsed (Icm): 3 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1A
- Power - Max: 5.1 W
- Switching Energy: 25.1µJ (on), 13.5µJ (off)
- Input Type: Standard
- Gate Charge: 9 nC
- Td (on/off) @ 25°C: 5.6ns/80ns
- Test Condition: 400V, 1A, 49Ohm, 15V
- Reverse Recovery Time (trr): 59.5 ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-3
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