IXGP20N120B
IXYS
IXYS
IGBT 1200V 40A 190W TO220
$0.00
Available to order
Reference Price (USD)
50+
$5.40280
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXGP20N120B by IXYS is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IXGP20N120B delivers robust performance. IXYS's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IXGP20N120B into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
- Power - Max: 190 W
- Switching Energy: 2.1mJ (off)
- Input Type: Standard
- Gate Charge: 72 nC
- Td (on/off) @ 25°C: 25ns/150ns
- Test Condition: 960V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
Related Products
IXYS
IXSH45N100
IXYS
IXGT20N120BD1
Renesas Electronics America Inc
RJH60D3DPP-M0#T2
Fairchild Semiconductor
FGA40N60UFDTU
IXYS
IXGH24N60B
onsemi
NGTB30N120IHRWG
Infineon Technologies
IRG4PC30U
Infineon Technologies
IGP20N60H3ATMA1
Renesas Electronics America Inc
RJH1CF7RDPQ-80#T2
IXYS