FGH40T65UPD
onsemi
onsemi
IGBT TRENCH/FS 650V 80A TO247-3
$0.00
Available to order
Reference Price (USD)
1+
$4.78000
10+
$4.31100
450+
$3.38411
900+
$3.05196
1,350+
$2.59740
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FGH40T65UPD Single IGBT transistor by onsemi is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The FGH40T65UPD ensures precise power control and long-term stability. With onsemi's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate FGH40T65UPD into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
- Power - Max: 268 W
- Switching Energy: 1.59mJ (on), 580µJ (off)
- Input Type: Standard
- Gate Charge: 177 nC
- Td (on/off) @ 25°C: 20ns/144ns
- Test Condition: 400V, 40A, 7Ohm, 15V
- Reverse Recovery Time (trr): 43 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
Related Products
Infineon Technologies
IRG4BC30FDPBF
IXYS
IXGQ170N30PB
onsemi
HGTP7N60A4-F102
Infineon Technologies
AUIRGF65G40D0
onsemi
NGTB15N60EG
Fairchild Semiconductor
HGTG12N60A4
onsemi
FGA20S125P-SN00336
Microsemi Corporation
APT95GR65JDU60
IXYS
IXGR35N120B
IXYS