FGH4L40T120LQD
onsemi
onsemi
1200V 40A FSIII IGBT LOW VCESAT
$8.84
Available to order
Reference Price (USD)
1+
$8.84000
500+
$8.7516
1000+
$8.6632
1500+
$8.5748
2000+
$8.4864
2500+
$8.398
Exquisite packaging
Discount
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The FGH4L40T120LQD Single IGBT transistor by onsemi is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The FGH4L40T120LQD ensures precise power control and long-term stability. With onsemi's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate FGH4L40T120LQD into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
- Power - Max: 306 W
- Switching Energy: 1.04mJ (on), 1.35mJ (off)
- Input Type: Standard
- Gate Charge: 227 nC
- Td (on/off) @ 25°C: 42ns/218ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 59 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4L
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