HGTP10N50E1D
Harris Corporation
Harris Corporation
17.5A, 500V, N-CHANNEL IGBT
$2.90
Available to order
Reference Price (USD)
1+
$2.90000
500+
$2.871
1000+
$2.842
1500+
$2.813
2000+
$2.784
2500+
$2.755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the HGTP10N50E1D Single IGBT transistor from Harris Corporation. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the HGTP10N50E1D ensures precision and reliability. Harris Corporation's cutting-edge technology guarantees a component that meets the highest industry standards. Choose HGTP10N50E1D for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 500 V
- Current - Collector (Ic) (Max): 17.5 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
- Power - Max: 75 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 19 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
Related Products
onsemi
TIG064E8-TL-H-ON
IXYS
IXYH30N120B4
onsemi
AFGHL40T120RLD
Infineon Technologies
FD800R17HP4-K_B2
Rohm Semiconductor
RGWX5TS65DHRC11
IXYS
IXBF40N160
Harris Corporation
HGTG24N60D1
Toshiba Semiconductor and Storage
GT50JR22(STA1,E,S)
Toshiba Semiconductor and Storage
GT50N322A
Infineon Technologies