FID35-06C
IXYS
IXYS
IGBT 600V 38A 125W I4PAC5
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Reference Price (USD)
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$12.95708
Exquisite packaging
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Optimize your power systems with the FID35-06C Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FID35-06C delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 38 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
- Power - Max: 125 W
- Switching Energy: 1.1mJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 140 nC
- Td (on/off) @ 25°C: -
- Test Condition: 300V, 25A, 10Ohm, 15V
- Reverse Recovery Time (trr): 50 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-5
- Supplier Device Package: ISOPLUS i4-PAC™
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