FS800R07A2E3B32BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULES
$722.22
Available to order
Reference Price (USD)
3+
$698.77667
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FS800R07A2E3B32BOSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FS800R07A2E3B32BOSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Vishay General Semiconductor - Diodes Division
VS-ETY020P120F
Microchip Technology
APTGL40X120T3G
Infineon Technologies
IFS75B12N3E4B31BOSA1
Infineon Technologies
FP150R07N3E4BOSA1
Microchip Technology
APTGT300SK170G
Microchip Technology
APTCV50H60T3G
Infineon Technologies
FP10R12W1T7PB3BPSA1
Infineon Technologies
FF450R12ME4EB11BPSA2
Infineon Technologies
FD16001200R17KF6CB2NOSA1
Infineon Technologies